Low-temperature resistivity in double-exchange systems

Low Temperature Resistivity

The temperature dependence of electrical resistivity was measured for three materials: a conductor (copper), a semiconductor (a carbon resistor), and a doped semiconductor (a pn junction). As expected, the resistance of the copper sample decreased with temperature and the resistance of the carbon resistor increased with temperature. The temperature coefficient of resistance of Cu was calculated...

Low-temperature Electrical Transport and Double Exchange In

Magnon scattering processes and low temperature resistivity in CMR manganites

Low temperature resistivity of CMR manganites is investigated. At the ground state, conduction electrons are perfectly spin polarized, which is called half-metallic. From one-magnon scattering processes, it is discussed that the resistivity of a half metal as a function of temperature scales as ρ(T )− ρ(0) ∝ T . We take (Nd0.8Tb0.2)0.6Sr0.4MnO3 as an example to compare theory and experiments. T...

Low-Temperature Resistivity Anomalies in Periodic Curved Surfaces

Effects of periodic curvature on the the electrical resistivity of corrugated semiconductor films are theoretically considered. The presence of a curvature-induced potential affects the motion of electrons confined to the thin curved film, resulting in a significant resistivity enhancement at specific values of two geometric parameters: the amplitude and period of the surface corrugation. The m...

Low temperature resistivity in a nearly half-metallic ferromagnet

We consider electron transport in a nearly half-metallic ferromagnet, in which the minority spin electrons close to the band edge at the Fermi energy are Anderson-localized due to disorder. For the case of spin-flip scattering of the conduction electrons due to the absorption and emission of magnons, the Boltzmann equation is exactly soluble to the linear order. From this solution we calculate ...